GT1K2P15D5
Goford Semiconductor
PMXB350UPEZ
Part Number：
PMXB350UPEZ
Category：
Single FETs, MOSFETs
Manufacturer：
NXP Semiconductors
Description：
NEXPERIA PMXB350UPE - 20 V, P-CH
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
- Vgs(th) (Max) @ Id 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Package / Case 3-XDFN Exposed Pad
- Supplier Device Package DFN1010D-3
- Rds On (Max) @ Id, Vgs 447mOhm @ 1.2A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 116 pF @ 10 V
- Power Dissipation (Max) 360mW (Ta), 5.68W (Tc)
