GT1K2P15D5
Goford Semiconductor
PSMN7R6-60XSQ
Part Number：
PSMN7R6-60XSQ
Category：
Single FETs, MOSFETs
Manufacturer：
NXP USA Inc.
Description：
MOSFET N-CH 60V 51.5A TO220F
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Supplier Device Package TO-220F
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Power Dissipation (Max) 46W (Tc)
- Rds On (Max) @ Id, Vgs 7.8mOhm @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs 38.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2651 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C 51.5A (Tc)
- Vgs(th) (Max) @ Id 4.6V @ 1mA
