GT1K2P15D5
Goford Semiconductor
R6006KND4TL1
Part Number：
R6006KND4TL1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
600V 2.8A SOT-223-3, HIGH-SPEED
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
- Operating Temperature 150°C (TJ)
- Supplier Device Package SOT-223-3
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Vgs(th) (Max) @ Id 5.5V @ 1mA
- Package / Case TO-261-3
- Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
- Rds On (Max) @ Id, Vgs 870mOhm @ 2A, 10V
- Power Dissipation (Max) 12.3W (Tc)
