GT1K2P15D5
Goford Semiconductor
R6010YNXC7G
Part Number：
R6010YNXC7G
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
600V 7A TO-220FM, HIGH-SPEED SWI
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Power Dissipation (Max) 47W (Tc)
- Vgs (Max) ±30V
- Supplier Device Package TO-220FM
- Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
- Rds On (Max) @ Id, Vgs 390mOhm @ 4.2A, 12V
- Vgs(th) (Max) @ Id 6V @ 1.2mA
