GT1K2P15D5
Goford Semiconductor
R6014YND3TL1
Part Number：
R6014YND3TL1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 600V 14A, TO-252, POWER MOSF
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 14A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Supplier Device Package TO-252
- Power Dissipation (Max) 132W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
- Rds On (Max) @ Id, Vgs 260mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id 6V @ 1.4mA
