GT1K2P15D5
Goford Semiconductor
R6504ENJTL
Part Number：
R6504ENJTL
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 650V 4A LPTS
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) 650 V
- Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
- Power Dissipation (Max) 58W (Tc)
- Vgs(th) (Max) @ Id 4V @ 130µA
- Supplier Device Package LPTS
- Rds On (Max) @ Id, Vgs 1.05Ohm @ 1.5A, 10V
