GT1K2P15D5
Goford Semiconductor
R6576KNZ4C13
Part Number：
R6576KNZ4C13
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
650V 76A TO-247, HIGH-SPEED SWIT
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Operating Temperature 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 76A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
- Power Dissipation (Max) 735W (Tc)
- Supplier Device Package TO-247G
- Rds On (Max) @ Id, Vgs 46mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id 5V @ 2.96mA
