GT1K2P15D5
Goford Semiconductor
RF1S23N06LE
Part Number：
RF1S23N06LE
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
23A, 60V, 0.065OHM, N-CHANNEL,
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Vgs (Max) ±10V
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Current - Continuous Drain (Id) @ 25°C 23A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Power Dissipation (Max) 75W (Tc)
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package I2PAK (TO-262)
- Rds On (Max) @ Id, Vgs 65mOhm @ 23A, 5V
