GT1K2P15D5
Goford Semiconductor
RF1S70N03
Part Number：
RF1S70N03
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 30V 70A TO262AA
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 150W (Tc)
- Drain to Source Voltage (Vdss) 30 V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
- Rds On (Max) @ Id, Vgs 10mOhm @ 70A, 10V
- Gate Charge (Qg) (Max) @ Vgs 260 nC @ 20 V
- Supplier Device Package TO-262AA
