GT1K2P15D5
Goford Semiconductor
RFL1N15L
Part Number：
RFL1N15L
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Vgs (Max) ±10V
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Drain to Source Voltage (Vdss) 150 V
- Current - Continuous Drain (Id) @ 25°C 1A (Tc)
- Package / Case TO-205AF Metal Can
- Power Dissipation (Max) 8.33W (Tc)
- Supplier Device Package TO-205AF (TO-39)
- Rds On (Max) @ Id, Vgs 1.9Ohm @ 1A, 5V
