GT1K2P15D5
Goford Semiconductor
RFP2N12
Part Number：
RFP2N12
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
N-CHANNEL, MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Power Dissipation (Max) 25W (Tc)
- Drain to Source Voltage (Vdss) 120 V
- Rds On (Max) @ Id, Vgs 1.75Ohm @ 2A, 10V
