GT1K2P15D5
Goford Semiconductor
RS1L180GNTB
Part Number：
RS1L180GNTB
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 60V 18A/68A 8HSOP
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Part Status Not For New Designs
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 3W (Ta)
- Supplier Device Package 8-HSOP
- Package / Case 8-PowerTDFN
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 18A, 10V
- Current - Continuous Drain (Id) @ 25°C 18A (Ta), 68A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3230 pF @ 30 V
