GT1K2P15D5
Goford Semiconductor
RX3L07BGNC16
Part Number：
RX3L07BGNC16
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 60V 70A, TO-220AB, POWER MOS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Part Status Not For New Designs
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Power Dissipation (Max) 96W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
- Vgs(th) (Max) @ Id 2.5V @ 50µA
- Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 30 V
- Rds On (Max) @ Id, Vgs 7.2mOhm @ 70A, 10V
