GT1K2P15D5
Goford Semiconductor
RX3P10BBHC16
Part Number：
RX3P10BBHC16
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 100V 100A, TO-220AB, POWER M
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
- Rds On (Max) @ Id, Vgs 3.3mOhm @ 90A, 10V
- Power Dissipation (Max) 189W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 50 V
