GT1K2P15D5
Goford Semiconductor
S2M0040120J-1
Part Number：
S2M0040120J-1
Category：
Single FETs, MOSFETs
Manufacturer：
SMC Diode Solutions
Description：
MOSFET SILICON CARBIDE SIC 1200V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package TO-263-7
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiCFET (Silicon Carbide)
- Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
- Vgs (Max) +20V, -5V
- Power Dissipation (Max) 348W (Tc)
- Current - Continuous Drain (Id) @ 25°C 55A (Tj)
- Gate Charge (Qg) (Max) @ Vgs 92.1 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1904 pF @ 1000 V
