GT1K2P15D5
Goford Semiconductor
SCT20N120H
Part Number：
SCT20N120H
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 1200V 20A H2PAK-2
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 200°C (TJ)
- Vgs(th) (Max) @ Id 3.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 175W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package H2PAK-2
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
