GT1K2P15D5
Goford Semiconductor
SCT2160KEHRC11
Part Number：
SCT2160KEHRC11
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
1200V, 22A, THD, SILICON-CARBIDE
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Vgs(th) (Max) @ Id 4V @ 2.5mA
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Operating Temperature 175°C (TJ)
- Power Dissipation (Max) 165W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -6V
- Rds On (Max) @ Id, Vgs 208mOhm @ 7A, 18V
- Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 800 V
- Supplier Device Package TO-247N
