GT1K2P15D5
Goford Semiconductor
SCT3120AW7TL
Part Number：
SCT3120AW7TL
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
SICFET N-CH 650V 21A TO263-7
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-263-7
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +22V, -4V
- Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
- Power Dissipation (Max) 100W
