GT1K2P15D5
Goford Semiconductor
SCTH70N120G2V-7
Part Number：
SCTH70N120G2V-7
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SILICON CARBIDE POWER MOSFET 120
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Supplier Device Package H2PAK-7
- Power Dissipation (Max) 469W (Tc)
- Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
