GT1K2P15D5
Goford Semiconductor
SCTW100N65G2AG
Part Number：
SCTW100N65G2AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 650V 100A HIP247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Operating Temperature -55°C ~ 200°C (TJ)
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Vgs(th) (Max) @ Id 5V @ 5mA
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package HiP247™
- Vgs (Max) +22V, -10V
- Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
- Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V
- Power Dissipation (Max) 420W (Tc)
