GT1K2P15D5
Goford Semiconductor
SCTW35N65G2V
Part Number：
SCTW35N65G2V
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 650V 45A HIP247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Operating Temperature -55°C ~ 200°C (TJ)
- Package / Case TO-247-3
- Vgs(th) (Max) @ Id 5V @ 1mA
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 45A (Tc)
- Power Dissipation (Max) 240W (Tc)
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package HiP247™
- Vgs (Max) +22V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
- Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
