GT1K2P15D5
Goford Semiconductor
SCTW40N120G2VAG
Part Number：
SCTW40N120G2VAG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 1200V 33A HIP247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Operating Temperature -55°C ~ 200°C (TJ)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 290W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package HiP247™
- Vgs (Max) +22V, -10V
- Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
- Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
