GT1K2P15D5
Goford Semiconductor
SCTWA10N120
Part Number：
SCTWA10N120
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
IC POWER MOSFET 1200V HIP247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Operating Temperature -55°C ~ 200°C (TJ)
- Package / Case TO-247-3
- Power Dissipation (Max) 110W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id 3.5V @ 250µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 1000 V
- Supplier Device Package HiP247™ Long Leads
