GT1K2P15D5
Goford Semiconductor
SI2012KL3-TP
Part Number：
SI2012KL3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
P-CHANNEL MOSFET,DFN1006-3
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Vgs (Max) ±10V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Package / Case SC-101, SOT-883
- Current - Continuous Drain (Id) @ 25°C 980mA (Ta)
- Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 4.5 V
- Supplier Device Package DFN1006-3
- Rds On (Max) @ Id, Vgs 500mOhm @ 400mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 74 pF @ 10 V
- Power Dissipation (Max) 740mW (Tj)
