GT1K2P15D5
Goford Semiconductor
SI2301HE3-TP
Part Number：
SI2301HE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
P-CHANNEL MOSFET,SOT-23
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V
- Supplier Device Package SOT-23
- Rds On (Max) @ Id, Vgs 100mOhm @ 2.4A, 4.5V
- Power Dissipation (Max) 1.1W (Tj)
- Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 418 pF @ 10 V
