GT1K2P15D5
Goford Semiconductor
SI2307A
Part Number：
SI2307A
Category：
Single FETs, MOSFETs
Manufacturer：
UMW
Description：
30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 15 V
- Operating Temperature 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Power Dissipation (Max) 1.25W (Ta)
- Supplier Device Package SOT-23
- Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 565 pF @ 15 V
