GT1K2P15D5
Goford Semiconductor
SICBG160N120A-TP
Part Number：
SICBG160N120A-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
MOSFET N-CH 1200V 18A TO263-7
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Supplier Device Package TO-263-7
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Power Dissipation (Max) 116W (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 16V, 20V
- Vgs (Max) +22V, -5V
- Rds On (Max) @ Id, Vgs 140mOhm @ 9A, 20V
- Vgs(th) (Max) @ Id 3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs 47 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 1000 V
