GT1K2P15D5
Goford Semiconductor
SICW025N120H-BP
Part Number：
SICW025N120H-BP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
SIC MOSFET,TO-247AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 86A (Tc)
- Power Dissipation (Max) 375W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247AB
- Vgs (Max) +25V, -10V
- Vgs(th) (Max) @ Id 4.5V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs 305 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 4909 pF @ 800 V
- Rds On (Max) @ Id, Vgs 33mOhm @ 40A, 20V
