SICW400N170A-BP

SICW400N170A-BP

Part Number: SICW400N170A-BP
Category: Single FETs, MOSFETs
Description: MOSFET N-CH 1700V 6A TO247AB
Packaging: Tube
ROHS Status: Yes
Currency: USD

Specifications

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Power Dissipation (Max) 125W (Tc)
  • Package / Case TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 6A (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +25V, -5V
  • Drain to Source Voltage (Vdss) 1700 V
  • Supplier Device Package TO-247AB
  • Vgs(th) (Max) @ Id 4.5V @ 5mA
  • Drive Voltage (Max Rds On, Min Rds On) 16V, 20V
  • Rds On (Max) @ Id, Vgs 500mOhm @ 3A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 31 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 333 pF @ 1000 V