GT1K2P15D5
Goford Semiconductor
SSM3J168F,LXHF
Part Number：
SSM3J168F,LXHF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
- Operating Temperature 150°C
- Vgs(th) (Max) @ Id 2V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Power Dissipation (Max) 600mW (Ta)
- Supplier Device Package S-Mini
- Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
- Vgs (Max) +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds 82 pF @ 10 V
- Rds On (Max) @ Id, Vgs 1.55Ohm @ 200mA, 10V
