GT1K2P15D5
Goford Semiconductor
SSM3J66MFV,L3XHF
Part Number：
SSM3J66MFV,L3XHF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
- Operating Temperature 150°C
- Drain to Source Voltage (Vdss) 20 V
- Power Dissipation (Max) 150mW (Ta)
- Package / Case SOT-723
- Vgs(th) (Max) @ Id 1V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V
- Supplier Device Package VESM
- Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
- Rds On (Max) @ Id, Vgs 390mOhm @ 800mA, 4.5V
- Vgs (Max) +6V, -8V
