GT1K2P15D5
Goford Semiconductor
SSM6G18NU,LF
Part Number：
SSM6G18NU,LF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET P-CH 20V 2A 6UDFN
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Grade -
- Qualification -
- FET Type P-Channel
- Power Dissipation (Max) 1W (Ta)
- Operating Temperature 150°C (TJ)
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- FET Feature Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Package / Case 6-WDFN Exposed Pad
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 4.5 V
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package 6-µDFN (2x2)
- Rds On (Max) @ Id, Vgs 112mOhm @ 1A, 4.5V
