GT1K2P15D5
Goford Semiconductor
SSM6J825R,LF
Part Number：
SSM6J825R,LF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
P-CH MOSFET -30V, -20/+10V, -4A
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C
- Vgs(th) (Max) @ Id 2V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Package / Case 6-SMD, Flat Leads
- Power Dissipation (Max) 1.5W (Ta)
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
- Vgs (Max) +10V, -20V
- Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 10V
- Supplier Device Package 6-TSOP-F
- Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 10 V
