GT1K2P15D5
Goford Semiconductor
STD10N60M6
Part Number：
STD10N60M6
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 600V 6.4A DPAK
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 60W (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±25V
- Supplier Device Package TO-252 (DPAK)
- Current - Continuous Drain (Id) @ 25°C 6.4A (Tc)
- Rds On (Max) @ Id, Vgs 600mOhm @ 3.2A, 10V
- Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 338 pF @ 100 V
