GT1K2P15D5
Goford Semiconductor
STH2N120K5-2AG
Part Number：
STH2N120K5-2AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 1200V 1.5A H2PAK-2
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 60W (Tc)
- Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Vgs(th) (Max) @ Id 4V @ 100µA
- Supplier Device Package H2PAK-2
- Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 100 V
