GT1K2P15D5
Goford Semiconductor
STHU32N65DM6AG
Part Number：
STHU32N65DM6AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 37A (Tc)
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 320W (Tc)
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Supplier Device Package HU3PAK
- Rds On (Max) @ Id, Vgs 97mOhm @ 18.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 52.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2211 pF @ 100 V
