GT1K2P15D5
Goford Semiconductor
STN6N60M2
Part Number：
STN6N60M2
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 600V 5.5A SOT223-2
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±25V
- Package / Case TO-261-3
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
- Power Dissipation (Max) 6W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 100 V
- Rds On (Max) @ Id, Vgs 1.25Ohm @ 2A, 10V
- Supplier Device Package SOT-223-2
