GT1K2P15D5
Goford Semiconductor
STP110N8F7
Part Number：
STP110N8F7
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 80V 80A TO220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-3
- Supplier Device Package TO-220
- Power Dissipation (Max) 170W (Tc)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 46.8 nC @ 10 V
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 40A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3435 pF @ 40 V
