GT1K2P15D5
Goford Semiconductor
STWA60N043DM9
Part Number：
STWA60N043DM9
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 56A (Tc)
- Power Dissipation (Max) 312W (Tc)
- Supplier Device Package TO-247 Long Leads
- Gate Charge (Qg) (Max) @ Vgs 78.6 nC @ 10 V
- Rds On (Max) @ Id, Vgs 43mOhm @ 28A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 4675 pF @ 400 V
