GT1K2P15D5
Goford Semiconductor
TJ15S06M3L,LXHQ
Part Number：
TJ15S06M3L,LXHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET P-CH 60V 15A DPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 3V @ 1mA
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power Dissipation (Max) 41W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Operating Temperature 175°C
- Vgs (Max) +10V, -20V
- Supplier Device Package DPAK+
- Rds On (Max) @ Id, Vgs 50mOhm @ 7.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 10 V
