GT1K2P15D5
Goford Semiconductor
TJ90S04M3L,LQ
Part Number：
TJ90S04M3L,LQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR DPA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id 2V @ 1mA
- Power Dissipation (Max) 180W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 40 V
- Current - Continuous Drain (Id) @ 25°C 90A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
- Operating Temperature 175°C
- Vgs (Max) +10V, -20V
- Supplier Device Package DPAK+
- Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 10 V
- Rds On (Max) @ Id, Vgs 4.3mOhm @ 45A, 10V
