GT1K2P15D5
Goford Semiconductor
TK12J60W,S1VE(S
Part Number：
TK12J60W,S1VE(S
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 600V 11.5A TO3P
Packaging：
Tray
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-3P-3, SC-65-3
- Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
- Power Dissipation (Max) 110W (Tc)
- Vgs (Max) ±30V
- Supplier Device Package TO-3P(N)
- Rds On (Max) @ Id, Vgs 300mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id 3.7V @ 600µA
- Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
