GT1K2P15D5
Goford Semiconductor
TK2P90E,RQ
Part Number：
TK2P90E,RQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR DPA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Drain to Source Voltage (Vdss) 900 V
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 4V @ 200µA
- Rds On (Max) @ Id, Vgs 5.9Ohm @ 1A, 10V
