GT1K2P15D5
Goford Semiconductor
TK3R1P04PL,RQ
Part Number：
TK3R1P04PL,RQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CHANNEL 40V 58A DPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 58A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Power Dissipation (Max) 87W (Tc)
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 2.4V @ 500µA
- Input Capacitance (Ciss) (Max) @ Vds 4670 pF @ 20 V
- Rds On (Max) @ Id, Vgs 3.1mOhm @ 29A, 10V
