GT1K2P15D5
Goford Semiconductor
TK42A12N1,S4X
Part Number：
TK42A12N1,S4X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 120V 42A TO220SIS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Package / Case TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Power Dissipation (Max) 35W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Drain to Source Voltage (Vdss) 120 V
- Supplier Device Package TO-220SIS
- Rds On (Max) @ Id, Vgs 9.4mOhm @ 21A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 60 V
