GT1K2P15D5
Goford Semiconductor
TP65H480G4JSG-TR
Part Number：
TP65H480G4JSG-TR
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 3.6A 3PQFN
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Vgs (Max) ±18V
- Technology GaNFET (Cascode Gallium Nitride FET)
- Drive Voltage (Max Rds On, Min Rds On) 8V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
- Package / Case 3-PowerTDFN
- Rds On (Max) @ Id, Vgs 560mOhm @ 3.4A, 8V
- Vgs(th) (Max) @ Id 2.8V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 8 V
- Power Dissipation (Max) 13.2W (Tc)
- Supplier Device Package 3-PQFN (5x6)
