GT1K2P15D5
Goford Semiconductor
TPH2R306NH1,LQ
Part Number：
TPH2R306NH1,LQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C
- Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Package / Case 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V
- Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
- Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 136A (Tc)
- Power Dissipation (Max) 800mW (Ta), 170W (Tc)
- Supplier Device Package 8-SOP Advance (5x5.75)
