GT1K2P15D5
Goford Semiconductor
TPH2R903PL,L1Q
Part Number：
TPH2R903PL,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Package / Case 8-PowerVDFN
- Supplier Device Package 8-SOP Advance (5x5)
- Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
- Operating Temperature 175°C
- Power Dissipation (Max) 960mW (Ta), 81W (Tc)
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id 2.1V @ 200µA
