GT1K2P15D5
Goford Semiconductor
TPH3202LD
Part Number：
TPH3202LD
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 600V 9A 4PQFN
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Vgs (Max) ±18V
- Power Dissipation (Max) 65W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
- Technology GaNFET (Gallium Nitride)
- Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 480 V
- Supplier Device Package 4-PQFN (8x8)
- Package / Case 4-PowerDFN
