GT1K2P15D5
Goford Semiconductor
TPH3207WS
Part Number：
TPH3207WS
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 50A TO247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247-3
- Vgs (Max) ±18V
- Power Dissipation (Max) 178W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 8 V
- Technology GaNFET (Gallium Nitride)
- Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 8V
- Vgs(th) (Max) @ Id 2.65V @ 700µA
- Input Capacitance (Ciss) (Max) @ Vds 2197 pF @ 400 V
